Method of forming a fuse part

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state

Reexamination Certificate

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Details

C438S642000, C438S661000, C257S355000, C257S750000

Reexamination Certificate

active

07745266

ABSTRACT:
The present invention provides a semiconductor device with a fuse part and a method of forming the same. The method includes forming a selective metal layer on a via hole which is connected to a metal line in a semiconductor device, forming a fuse metal layer on the selective metal layer, and forming a fuse metal layer pattern by using a photosensitive layer pattern which is formed on the fuse metal layer.

REFERENCES:
patent: 2002/0037643 (2002-03-01), Ishimaru
patent: 2002/0100907 (2002-08-01), Wang

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