Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Reexamination Certificate
2005-12-28
2010-06-29
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
C438S642000, C438S661000, C257S355000, C257S750000
Reexamination Certificate
active
07745266
ABSTRACT:
The present invention provides a semiconductor device with a fuse part and a method of forming the same. The method includes forming a selective metal layer on a via hole which is connected to a metal line in a semiconductor device, forming a fuse metal layer on the selective metal layer, and forming a fuse metal layer pattern by using a photosensitive layer pattern which is formed on the fuse metal layer.
REFERENCES:
patent: 2002/0037643 (2002-03-01), Ishimaru
patent: 2002/0100907 (2002-08-01), Wang
Dang Phuc T
Dongbu Electronics Co. Ltd.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
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