Method of forming a frontside contact to the silicon substrate o

Details Method of forming a frontside contact to the silicon substrate o Method of forming a frontside contact to the silicon substrate o

1993-04-30

1994-05-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 21, 437 28, 437 34, 437 40, H01L 2144

Patent

active

053148410

ABSTRACT:
A method of having a frontside contact to a SOI wafer is described. Before any device processing steps a trench is etched through the SOI layers to the substrate. This trench is maintained during device processing and opened during source/drain implantation. At metallization an ohmic contact is made to the substrate.

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