Coating processes – Applying superposed diverse coating or coating a coated base – Metal coating
Reexamination Certificate
2006-11-07
2006-11-07
Meeks, Timothy (Department: 1762)
Coating processes
Applying superposed diverse coating or coating a coated base
Metal coating
C427S123000, C427S126100, C427S419100
Reexamination Certificate
active
07132132
ABSTRACT:
A method of forming a fluid ejection device is disclosed. The steps of forming the fluid ejection device may include forming a heating element on a substrate. The steps for forming the fluid ejection device may further include depositing a buffer layer over the heating element, and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer.
REFERENCES:
patent: 3878079 (1975-04-01), Schauer
patent: 4719477 (1988-01-01), Hess
patent: 5221449 (1993-06-01), Colgan et al.
patent: 5317346 (1994-05-01), Garcia
patent: 5593556 (1997-01-01), Kumagai et al.
patent: 6013160 (2000-01-01), Raisanen et al.
patent: 6139699 (2000-10-01), Chiang et al.
patent: 6162589 (2000-12-01), Chen et al.
patent: 6209991 (2001-04-01), Regan et al.
patent: 6286939 (2001-09-01), Hindman et al.
patent: 6369491 (2002-04-01), Nakagawa et al.
patent: 6387719 (2002-05-01), Mrvos et al.
patent: 6395148 (2002-05-01), Whitman
patent: 6451181 (2002-09-01), Denning et al.
patent: 6458255 (2002-10-01), Chiang et al.
patent: 6488823 (2002-12-01), Chiang et al.
patent: 6513913 (2003-02-01), Schulte et al.
patent: 2002/0070375 (2002-06-01), Chiang et al.
patent: WO 01/64443 (2001-07-01), None
Hilke Donohue, et al. “Low-resistivity PVD a-tantalum: Phase formation and integration in ultra-low K dielectric/copper damascene structures”.
D. Fischer, et al.; “Barrier and Contact Behavior of Tantalum Based Thin Films for Use in Copper Metallization Scheme”.
G.S. Chen et al., Growth of sputter disposited Ta and Ta-N thin films Induced by an underlying titanium layer and varying nitrogen flow rates, Applied Surface Science . . . 169-170 (2001) pp. 353-357.
Fletcher, III William Phillip
Hewlett--Packard Development Company, L.P.
Meeks Timothy
LandOfFree
Method of forming a fluid ejection device with a compressive... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a fluid ejection device with a compressive..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a fluid ejection device with a compressive... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3678025