Method of forming a finFET and structure

Details Method of forming a finFET and structure Method of forming a finFET and structure

2011-03-22

2011-03-22

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Chemical etching

C438S698000, C438S149000, C438S192000, C438S196000, C438S212000, C257SE21537

Reexamination Certificate

active

07910482

ABSTRACT:
A method for processing a substrate comprising at least a buried oxide (BOX) layer and a semiconductor material layer is provided. The method includes etching the semiconductor material layer to form a vertical semiconductor material structure overlying the BOX layer, leaving an exposed portion of the BOX layer. The method further includes exposing a top surface of the exposed portion of the BOX layer to an oxide etch resistant species to form a thin oxide etch resistant layer overlying the exposed portion of the BOX layer.

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