Method of forming a fine pattern with a charged particle beam

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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H01J 3700

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active

047120134

ABSTRACT:
A method of forming a fine pattern with a charged beam, comprises steps of irradiating, with a charged beam, a predetermined region of a sample to form an exposure pattern on the sample, and irradiating, with at least one of a charged beam or an electromagnetic wave, and at a dose smaller than the dose for forming the main pattern, the entire surface of the specific pattern and nonpattern regions around the specific pattern region to perform an auxiliary exposure. The step of performing the auxiliary exposure is performed at a high voltage of, for example, more than 30 KeV so as not to change the molecular distribution along the direction of thickness of an irradiated portion of the sample.

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patent: 4426584 (1984-01-01), Bohlen et al.
patent: 4463265 (1984-07-01), Owen et al.
patent: 4504558 (1985-03-01), Bohlen et al.
"Automatic Electron Beam Fabrication of Micron-size Devices", Scanning Electron Microsopy, Wilson et al., 4-1976.

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