Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-01-31
2006-01-31
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S724000, C438S787000
Reexamination Certificate
active
06992013
ABSTRACT:
In a method of forming a fine pattern, a silicon-oxide-based film is formed directly or by way of another layer on a substrate or on an underlying layer. The silicon-oxide-based film is formed such that nitrogen content of the surface thereof assumes a value of 0.1 atm. % or less. A chemically-amplified photoresist layer is formed on the silicon-oxide-based film. A mask pattern of a mask is transferred onto the chemically-amplified photoresist layer upon exposure through the mask. Thus, there is prevented generation of a tapered corner in a portion of a resist pattern in the vicinity of a boundary area between the resist pattern and a substrate.
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Arai Hiroki
Okabe Ichiro
ASM Japan K.K.
Díaz José R.
Foley & Lardner LLP
Semiconductor Leading Edge Technologies Inc.
Thomas Tom
LandOfFree
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