Method of forming a film on a substrate

Coating processes – With pretreatment of the base

Reexamination Certificate

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C427S008000, C427S535000

Reexamination Certificate

active

07910167

ABSTRACT:
A film-forming method of forming a film on a substrate includes performing a surface-improving treatment on the substrate, determining whether a predetermined amount of time has passed since the surface-improving treatment has been performed on the substrate, applying a film-forming solution to the substrate when it is determined that the predetermined amount of time has not passed, and repeating the surface-improving treatment on the substrate when it is determined that the predetermined amount of time has passed.

REFERENCES:
patent: 6599582 (2003-07-01), Kiguchi et al.
patent: 6959502 (2005-11-01), Nakamura et al.
patent: S64-59919 (1989-03-01), None
patent: 09-090365 (1997-04-01), None
patent: 09-090365 (1997-04-01), None
patent: 2001-184732 (2001-07-01), None
patent: 2001-185464 (2001-07-01), None
patent: 2004-219038 (2004-08-01), None
patent: 2004-294879 (2004-10-01), None
patent: 1999-67996 (1999-08-01), None
patent: 2004-71191 (2004-08-01), None
patent: 383280 (2000-03-01), None
Chu Guo-hong et al.; “Surface Modification of CPP Film by means of Plasma”; Journal of Jinan University, Dec. 2003, vol. 17. No. 4, School of Chemistry and Chemical Engineering, Jinan University, Jinan 250022, China.

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