Method of forming a ferromagnetic memory device

Details Method of forming a ferromagnetic memory device Method of forming a ferromagnetic memory device

1994-03-28

1995-02-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053895665

ABSTRACT:
A ferromagnetic memory circuit (10) and a ferromagnetic memory device (15) which has a substrate (42). Within the substrate (42), a first current electrode (44) and a second current electrode (46) are formed. A control electrode (50) is formed to control current flow between the first and second current electrodes (44 and 46). A ferromagnetic region (68) is used to store a logic value via magnetic flux. Two conductive layers (62 and 70) and a conductive spacer (78) form a sense conductor for device (15). The sense conductor is used to externally provide the logic value stored in the device (15). A conductive layer (82) forms a program/erase line for altering the logic value stored in the device (15). A logic one or a logic zero is stored in ferromagnetic region (68) depending upon a direction and a magnitude of current flow through conductive layer (82).

REFERENCES:
patent: 3573485 (1971-04-01), Ballard
patent: 4103340 (1978-07-01), Fayling
patent: 5046043 (1991-09-01), Miller et al.
patent: 5155573 (1992-10-01), Abe et al.
patent: 5307304 (1994-04-01), Saito

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