Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-04-26
2005-04-26
Wille, Douglas (Department: 2814)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C438S393000, C438S396000
Reexamination Certificate
active
06884631
ABSTRACT:
In a method of forming a ferroelectric film according to the present invention, pulsed laser light or pulsed lamp light is applied to an amorphous oxide film formed over a substrate to form microcrystalline nuclei of oxide in the oxide film. A light transmission and/or absorption film is formed over the oxide film. Crystallization of the oxide is performed by applying pulsed laser light or pulsed lamp light from above the light transmission and/or absorption film to form a ferroelectric film.
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U.S. Appl. No. 10/397,315, filed Mar. 27, 2003, Sawasaki.
Duy Mai Anh
Oliff & Berridg,e PLC
Wille Douglas
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