Method of forming a ferroelectric film and fabrication...

Details Method of forming a ferroelectric film and fabrication... Method of forming a ferroelectric film and fabrication...

2005-02-08

2005-02-08

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S005000, C438S007000, C438S635000, C438S253000, C438S396000, C118S665000, C118S667000, C118S712000, C118S058000

Reexamination Certificate

active

06852551

ABSTRACT:
A method of forming a ferroelectric film includes the steps of forming a layer by a material that takes a metal state in a reducing ambient and an oxide state in an oxidizing ambient, and depositing a ferroelectric film on a surface of the layer by supplying gaseous sources of the ferroelectric film and an oxidizing gas and causing a decomposition of the gaseous sources at the surface of said layer, wherein the step of depositing the ferroelectric film is started with a preparation step in which the state of the surface of said layer is controlled substantially to a critical point in which the layer changes from the metal state to the oxide state and from the oxide state to the metal state.

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