Method of forming a dram cell having a ring-type stacked capacit

Details Method of forming a dram cell having a ring-type stacked capacit Method of forming a dram cell having a ring-type stacked capacit

1994-07-13

1995-07-04

Chaudhuri, O.

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

054299799

ABSTRACT:
A new method for fabricating a storage capacitor, on a dynamic random access memory (DRAM) cell, having a ring-type sidewall was accomplished. The method involves opening the self-aligned node contact to the source/drain area of the field effect transistor and forming the bottom capacitor electrode. The same photoresist mask used to open the self-aligned node contact is later used to mask and partially etch the polysilicon bottom capacitor electrode to form the ring-type sidewall on the bottom electrode. The storage capacitor is then completed by forming a thin capacitor dielectric and depositing the top electrode. The method provides a simple process that increases the capacitance of the storage capacitor by about 40 percent while not adversely affecting the leakage current.

REFERENCES:
patent: 5068199 (1991-11-01), Sandhu
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5192702 (1993-03-01), Tseng
patent: 5326714 (1994-07-01), Liu et al.

Affiliated with

Also associated with

Rating

Method of forming a dram cell having a ring-type stacked capacit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a dram cell having a ring-type stacked capacit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a dram cell having a ring-type stacked capacit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-759774