Method of forming a doped region in a semiconductor substrate ut

Details Method of forming a doped region in a semiconductor substrate ut Method of forming a doped region in a semiconductor substrate ut

1991-02-07

1995-01-31

Fourson, George

Fishing, trapping, and vermin destroying

437 97, 437141, 437160, H01L 21265

Patent

active

053858506

ABSTRACT:
A low temperature, epitaxial, in situ doped semiconductor layer is used as a sacrificial dopant source. The resulting doped region is small-dimensioned with a tightly controlled dopant concentration. The dopant layer is oxidized in a relatively low-temperature environment, and removed by etching. The process can be used to form a vertical bipolar transistor, where the doped region is the base, and wherein portions of the oxidized dopant layer are left as insulators.

REFERENCES:
patent: 4012235 (1977-03-01), Mayer et al.
patent: 4101349 (1978-07-01), Rooesner et al.
patent: 4116732 (1978-09-01), Shier
patent: 4125418 (1978-11-01), Vinton
patent: 4165558 (1979-08-01), Armitage, Jr. et al.
patent: 4359816 (1982-11-01), Abbas et al.
patent: 4379726 (1983-04-01), Kumarmaru et al.
patent: 4431460 (1984-02-01), Barson et al.
patent: 4623426 (1986-11-01), Peters
patent: 4859626 (1989-08-01), Wise
patent: 4894349 (1990-01-01), Saito et al.
patent: 5008207 (1991-04-01), Blouse et al.
IEDM-89, pp. 221-224, by M. Sugiyama et al., "A 40GHz f.sub.T Si Bipolar Transistor LSI Technology" (1989).
Appl. Phys. Lett. 48(12), 1986, pp. 797-799 by B. S. Meyerson, "Low-temperature Silicon Epitaxy by Ultrahigh Vacuum/Chemical Vapor Deposition".
IBM Technical Disclosure Bulletin, vol. 30, No. 9, Feb 1988, "Low Temperature Fabrication Process for High-Performance MOSFETs".

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