Method of forming a doped field emitter array

Electric lamp or space discharge component or device manufacturi – Process – Electrode making

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438 20, H01J 902

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active

057724881

ABSTRACT:
According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention a process for manufacturing an FED is provided comprising the steps of: forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to the an emission surface of the emitter.

REFERENCES:
patent: 4325000 (1982-04-01), Wolfe et al.
patent: 4940916 (1990-07-01), Borel et al.
patent: 5089292 (1992-02-01), MaCaulay et al.
patent: 5186670 (1993-02-01), Doan et al.
patent: 5210472 (1993-05-01), Casper et al.
patent: 5229331 (1993-07-01), Doan et al.
patent: 5358908 (1994-10-01), Reinberg et al.
patent: 5391259 (1995-02-01), Cathey et al.
Evtukh, et al., "Parameters of the Tip Arrays Covered by Low Work Function Layers," J. Vac. Sci. Tech. B 14(3),pp.2130-2134 Pub. May-Jun. 1996).
Evtukh et al. Jul. 30, 1995 "Parameters of the Tip Arrays Covered by Low Work Function Layers," Institute of Semiconductor Physics Academy of Sciences, Prospect Nauki 45, Kiev-252028, Ukraine (Aug. 1995).
Bauch et al. Apr. 1989 "Effect of Cs Contamination on the Interface State Density of Mnos Capacitors,"Applied Surface Science 39: 356-363.
Macaulay et al. 24 Aug. 1992 "Ceslated thin-film field-emission microcathode arrays," Appl. Phys. Lett., vol. 61, NO. 8, pp. 997-999.
Branston et al. Oct. 1991 "Field Emission from Metal-Coated Silicon Tips,"IEEE Transactions on Electron Devices, vol. 38, No. 10, pp. 2329-2333.
Michaelson H.B Jan. 1978 "Relation Between an Atomic Electronegativity Scale and the Work Function," IBM J. Res. Develop, vol. 22, No. 1, pp. 72-80.
Ea et al. Jul. 1990 "Avalanche Electron Emission Cathode Array," Vacuume Microelectronics Conference.

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