Method of forming a dielectric layer on a semiconductor...

Details Method of forming a dielectric layer on a semiconductor... Method of forming a dielectric layer on a semiconductor...

2009-06-03

2010-06-08

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S026000, C438S692000

Reexamination Certificate

active

07732231

ABSTRACT:
A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A portion of the light emitting layer and the p-type region are removed to expose a portion of the n-type region. A first metal contact is formed on an exposed portion of the n-type region and a second metal contact is formed on a remaining portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A surface of the device is then planarized by removing a portion of at least one of the first metal contact, the second metal contact, and the dielectric material.

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