Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1984-04-25
1985-05-07
Demers, Arthur P.
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
204192S, 204192SP, C23C 1500
Patent
active
045156689
ABSTRACT:
The present invention comprises a method of forming a thin film dielectric layer on a substrate. The method comprises providing a sputtering chamber having a dielectric target disposed on a target electrode. A substrate to be covered with a thin film dielectric layer is introduced into the sputtering chamber and the substrate is located on a substrate holder electrode spaced from the target electrode. The chamber is then evacuated, and a sputtering atmosphere comprising an inert gas and a gas containing an element of a gettering material is introduced into the chamber. The gas containing an element of a gettering material is transferred into the chamber through a metering valve from a container outside the chamber. An RF potential is applied across the target electrode and the substrate electrode to establish a glow discharge in the region between the electrodes. Finally, a thin film dielectric layer doped with a gettering material is formed by a chemical reaction in the chamber.
REFERENCES:
patent: 3743587 (1973-07-01), Kennedy
patent: 3907616 (1975-09-01), Wiemer
patent: 3983022 (1976-09-01), Auyang et al.
patent: 4013532 (1977-03-01), Cormia et al.
patent: 4013533 (1977-03-01), Cohen-Solal
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4191603 (1980-03-01), Garbarino et al.
patent: 4202916 (1980-05-01), Chadda
patent: 4260425 (1981-04-01), Ulrich et al.
patent: 4271582 (1981-06-01), Shirai et al.
patent: 4273805 (1981-06-01), Dawson et al.
patent: 4384933 (1983-05-01), Takasaki
A. C. Adams, Plasma Planarization, Solid State Technology, Apr. 1981, 178-181.
S. N. Ghosh Dastidar, Diffusion of Phosphorus into Silicon Using Phosphine Gas as a Source, Solid State Technology, Nov. 1975, 37-46.
Paul et al. Solid State Commun. 20 (1976) pp. 969-972.
Brownell David J.
Roberts Jon A.
Demers Arthur P.
Honeywell Inc.
Sumner John P.
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