Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Having enclosed cavity
Reexamination Certificate
2007-04-18
2009-10-20
Garber, Charles D. (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Having enclosed cavity
C438S455000, C438S458000, C438S459000, C257SE21088, C257SE21122, C257SE21567
Reexamination Certificate
active
07605054
ABSTRACT:
A method for forming a device wafer with a recyclable support by providing a wafer having first and second surfaces, with at least the first surface of the wafer comprising a semiconductor material that is suitable for receiving or forming electronic devices thereon, providing a supporting substrate having upper and lower surfaces, and providing the second surface of the wafer or the upper surface of the supporting substrate with void features in an amount sufficient to enable a connecting bond therebetween to form a construct wherein the bond is formed at an interface between the wafer and the substrate and is suitable to maintain the wafer and supporting substrate in association while forming or applying electronic devices to the first surface of the wafer, but which connecting bond is severable at the interface due to the void features to separate the substrate from the wafer so that the substrate can be reused.
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Abdelaziez Yasser A
Garber Charles D.
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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