Method of forming a device by removing a conductive layer of...

Details Method of forming a device by removing a conductive layer of... Method of forming a device by removing a conductive layer of...

2009-01-09

2010-10-19

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S061000, C438S068000, C347S054000, C347S069000, C361S700000

Reexamination Certificate

active

07816165

ABSTRACT:
A method of forming a MEMS device provides a wafer having a base with a conductive portion. The wafer also has an intermediate conductive layer. After it provides the wafer, the method adds a diaphragm layer to the wafer. The method removes at least a portion of the intermediate conductive layer to form a cavity between the diaphragm layer and the base. At least a portion of the diaphragm layer is movable relative to the base. After it forms the cavity, the method seals the cavity.

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