Method of forming a data storage medium and data storage device

Stock material or miscellaneous articles – Composite – Of inorganic material

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4272481, 4272552, 4272553, 4272555, 428 65, 428689, 428698, 428702, 428704, 428913, 428938, B32B 900, B32B 1900, C23C 1600

Patent

active

046210326

ABSTRACT:
Disclosed is an optical data storage device and a method of making the device. The device has a thin film of a multi-component, phase changeable, chalcogenide material. The thin film is prepared by vacuum deposition of a substantially non-convecting, multi-component, chalcogenide containing first source. The multicomponent source is converted to a non-condensed state, and the non-condensed material is deposited onto the substrate to form a deposit having substantial source/deposit compositional equivalence and the substantial absence of concentration gradients.

REFERENCES:
patent: 3218203 (1965-11-01), Ruehrwein
patent: 3530441 (1970-09-01), Ovshinsky
patent: 3664866 (1972-05-01), Manasevit
patent: 3870558 (1975-03-01), Shimizu et al.
patent: 3971874 (1976-07-01), Ohta et al.
patent: 4066481 (1978-01-01), Manasevit et al.
patent: 4069356 (1978-01-01), Fischer
patent: 4091171 (1978-05-01), Ohta et al.
patent: 4207119 (1980-06-01), Tyan
patent: 4447469 (1984-05-01), Peters
Holloway et al, "Isothermal Effusion Sources for Vacuum Deposition of Solid Solutions", J. of Vacuum Sci. & Tech., vol. 7, No. 6, pp. 586-588, 1970.
Sanitarov et al, "Epitaxial Layers of Solid Solutions CdSe.sub.x Te.sub.1-x ", Inorganic Material, vol. 13, No. 2, pp. 210-212, Jul. 1977.
Dashevskii et al, "Preparation & Certain Properties of Films of Solid Solutions of the System Bi.sub.2 Te.sub.3-x Se.sub.x ", Inorganic Material, vol. 13, No. 6, pp. 786-788, Nov. 1977.
Freik, et al, "Preparation of Subgroup IV Chalcogenides in a Double Quasiclosed Volume", pp. 527-528, Aug. 1978.
Baltrunas et al, "Investigation of Films Belonging to the System Sn.sub.1-x Pb.sub.x Te and Produced Under Quasi-Equilibrium Conditions", Physical Collect., vol. 18, No. 5, pp. 50-55, 1978.
Feltz et al, "Preparation of Amorphous Layers of Ge.sub.4 Se.sub.5 Te and Their Electrical Properties", Thin Solid Films, vol. 70, (1980) pp. 175-180, 1980.
Takenaga et al, "New Optical Medium Using Tellurium Suboxide Thin Film", Proceedings, SPIE Conference on Optical Data Storage, pp. 173-177, 1983.
Feinleib et al, "Rapid Reversible Light-Induced Crystallization of Amorphous Semiconductors", Applied Physics Letters, vol. 18, No. 6, Mar. 15, 1971.
Chen et al, "Reversibility and Stability of Tellurium Alloys for Optical Data Storage Applications", Appl. Phys. Lett., vol. 46, No. 8, Apr. 15, 1985.

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