Method of forming a curved implanted region in a semiconductor b

Details Method of forming a curved implanted region in a semiconductor b Method of forming a curved implanted region in a semiconductor b

1977-01-28

1978-09-12

Dean, R.

Metal treatment

Compositions

Heat treating

148187, 357 20, 357 48, 357 91, H01L 21265

Patent

active

041135164

ABSTRACT:
A method is disclosed whereby a region having a varying conductivity profile and depth is formed in a body of semiconductor material. The method includes the step of implanting conductivity modifiers beneath a curved surface of the body. Such a region, fabricated by the present method, is particularly useful as one element of a semi-conductor device.

REFERENCES:
patent: 3620851 (1971-11-01), King et al.
patent: 3697827 (1972-10-01), Simon
patent: 3730778 (1973-05-01), Shannon et al.
patent: 3890632 (1976-06-01), Ham et al.
patent: 3899363 (1975-08-01), Dennard et al.
patent: 3901737 (1975-08-01), Dash
patent: 3947866 (1976-03-01), Stellrecht
patent: 4004949 (1977-01-01), Lesk
patent: 4029522 (1977-06-01), De La Moneda
C. L. Bertin, "Lateral Transistor with Built-In Electric Field", IBM Tech. Disc. Bull. 16, (1973) 280.
J. E. Ziegler et al., "Self-Isolating Bath-Tub Collector for a Planar Transistor", IBM Tech. Disc. Bull. 14, (1971) 1635.
A. Lekholm et al., "Edge-Breakdown in Mesa Diodes", IEEE Trans. Electronic Devices, ED-18, (1971) 844.

Affiliated with

Also associated with

Rating

Method of forming a curved implanted region in a semiconductor b does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a curved implanted region in a semiconductor b, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a curved implanted region in a semiconductor b will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2382552