Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Patent
1996-11-14
1999-12-07
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step of heat treating...
117 2, 117 9, 427 531, 4271261, C30B 2302
Patent
active
059976349
ABSTRACT:
A method of forming a crystalline phase material includes, a) providing a stress inducing material within or operatively adjacent a crystalline material of a first crystalline phase; and b) annealing the crystalline material of the first crystalline phase under conditions effective to transform it to a second crystalline phase. The stress inducing material preferably induces compressive stress within the first crystalline phase during the anneal to the second crystalline phase to lower the required activation energy to produce a more dense second crystalline phase. Example compressive stress inducing layers include SiO.sub.2 and Si.sub.3 N.sub.4, while example stress inducing materials for providing into layers are Ge, W and Co. Where the compressive stress inducing material is provided on the same side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is less than the first phase crystalline material. Where the compressive stress inducing material is provided on the opposite side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is greater than the first phase crystalline material. Example and preferred crystalline phase materials having two phases are refractory metal silicides, such as TiSi.sub.x.
REFERENCES:
patent: 4568565 (1986-02-01), Gupta et al.
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5240739 (1993-08-01), Doan et al.
patent: 5376405 (1994-12-01), Doan et al.
Nagabushnam, R.V., et al., "Kinetics and Mechanism Of the C49 to C54 Titanium Disilicide Phase Transformation Formation In Nitrogen Amboemt", 5 pages (Nov. 1995).
"Optimized Depositions Parameter for Low Pressure Chemical, Vapor Deposited Titanium Silicide", II deremetal, pp. 2590-2596.
Ilderem, V., et al., "Optimized Deposition Parameters For Low Pressure Chemical Vapor Deposited Titanium Silicide", Massachusetts Institute of Technology, vol. 135, No. 10, pp. 2590-2596 (Feb. 1988).
Sandhu Gurtej S.
Sharan Sujit
Hiteshew Felisa
Micro)n Technology, Inc.
LandOfFree
Method of forming a crystalline phase material does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a crystalline phase material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a crystalline phase material will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-819379