Method of forming a crystalline ferroelectric dielectric materia

Details Method of forming a crystalline ferroelectric dielectric materia Method of forming a crystalline ferroelectric dielectric materia

1996-12-09

1998-03-17

Dang, Trung

Fishing, trapping, and vermin destroying

437919, 437225, H01L 2102

Patent

active

057286035

ABSTRACT:
A method is provided for forming a crystalline perovskite phase of a ferroelectric dielectric material by a process of depositing a layer of amorphous ferroelectric precursor material and then annealing in an oxygen containing atmosphere in the presence of water vapor, preferably with the addition of a few percent of ozone and at a temperature of less than 500.degree. C. Advantageously, the method provides for formation of a ferroelectric material comprising lead zirconate titanate, with low film stress, high dielectric constant and low leakage current. The reduced thermal budget allows for increase flexibility in integration of ferroelectric materials, e.g. after a step of deposition of low melting point metal or metal alloy.

REFERENCES:
patent: 4963390 (1990-10-01), Lipeles et al.
patent: 5043049 (1991-08-01), Takenaka
patent: 5116643 (1992-05-01), Miller et al.
patent: 5164808 (1992-11-01), Evans, Jr. et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5258093 (1993-11-01), Maniar
patent: 5271955 (1993-12-01), Maniar
patent: 5350705 (1994-09-01), Brassington et al.
patent: 5358889 (1994-10-01), Emesh et al.
patent: 5374578 (1994-12-01), Patel et al.
patent: 5443688 (1995-08-01), Toure et al.
Journal of Applied Physics, 1 Sep. 1994, USA, vol. 76, No. 5, ISSN 0021-8979, pp. 2711-2718, Simpson T W et al "Hydrogen catalyzed crystallization of strontium titanate".
B.A. Tuttle, et al Mat. Res. Soc. Symp. Proc vol. 200 (1990) pp. 159-169 "Charactrization of Chemically Prepared PZT Thin Film".
S. Merklein, et al Mat. Res. Symp. Proc. vol. 310, 1993, pp. 263-268 "Crystallization Behavior and Electrical Properties of Wet-Chemically Deposited Lead Zirconate Titanate Thin Films".
J.S. Wright, et al "Phase development in Si modified sol-gel-derived lead titanate" J. Mater. Res. vol. 8, No. 7, Jul. 1993 pp. 1712-1720.
V. Joshi, et al "The influence of water of hydrolysis on microstructural development in sol-gel-derived LiNbO3 thin films" J. Mater, Res., vol. 8, No. 10, Oct. 1993 pp. 2668-2678.
M. Shimizu, et al "Preparation of PZT Thin Films by Mocvd Using a New Pb Precursor" 6th International Symposium on Integrated Ferroelectrics mar. 1994 p. 22c.
"Encyclopedia of Chemical Technology" ed. R. Kirk, D. Othmer vol. 9, p. 735 (re:02/03 explosion hazard).

Affiliated with

Also associated with

Rating

Method of forming a crystalline ferroelectric dielectric materia does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a crystalline ferroelectric dielectric materia, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a crystalline ferroelectric dielectric materia will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-957134