Method of forming a cross-section hourglass shaped channel...

Details Method of forming a cross-section hourglass shaped channel... Method of forming a cross-section hourglass shaped channel...

2011-01-04

2011-01-04

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S040000, C438S300000, C438S706000

Reexamination Certificate

active

07863197

ABSTRACT:
A method for fabricating the semiconductor structure include a semiconductor substrate having a cross-section hourglass shaped channel region. A stress imparting layer is located adjacent the channel region. The hourglass shape may provide for enhanced vertical tensile stress within the channel region when it is longitudinally compressive stressed by the stress imparting layer.

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