Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-10-10
2008-05-13
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S098000
Reexamination Certificate
active
07371604
ABSTRACT:
Contact structures having I shapes and L shapes, and methods of fabricating I-shaped and L-shaped contact structures, are employed in semiconductor devices and, in certain instances, phase-change nonvolatile memory devices. The I-shaped and L-shaped contact structures produced by these methods exhibit relatively small active areas. The methods that determine the contact structure dimensions employ conventional semiconductor deposit and etch processing steps that are capable of creating readily reproducible results.
REFERENCES:
patent: 6437393 (2002-08-01), Pio
patent: 6847535 (2005-01-01), Gilton et al.
Lee Ming Hsiu
Liu Ruichen
Le Thao P.
Macronix International Co. Ltd.
Stout, Uxa Buyan & Mullins, LLP
LandOfFree
Method of forming a contact structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a contact structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a contact structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3987063