Method of forming a contact on the surface of a semiconductor bo

Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29572, 29590, 136256, 252514, 148188, H01L 2714

Patent

active

042426960

ABSTRACT:
A method of forming a contact on the surface of a semiconductor by a serigraphy treatment in which a doped conductive paste is provided in a first deposition, and then a second deposition containing no dopant is provided at least partly on the first deposition. Devices made in accordance with the invention are particularly suited for use as photovoltaic converters for solar radiation.

REFERENCES:
patent: 3743538 (1973-07-01), Mungaard
patent: 4127424 (1978-11-01), Ullery

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming a contact on the surface of a semiconductor bo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a contact on the surface of a semiconductor bo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a contact on the surface of a semiconductor bo will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-10265

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.