Method of forming a conductive structure in a semiconductor...

Details Method of forming a conductive structure in a semiconductor... Method of forming a conductive structure in a semiconductor...

2005-08-16

2005-08-16

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Sidewall base contact

C438S134000, C438S309000, C438S345000, C438S350000, C438S427000

Reexamination Certificate

active

06930010

ABSTRACT:
A conductive structure provides a conductive path from a first region in a semiconductor material to a second spaced apart region in the semiconductor material by forming one or more trenches between the first and second regions, and implanting a dopant into the bottom surfaces of the trenches to form a continuous conductive path.

REFERENCES:
patent: 4808550 (1989-02-01), Fukushima
patent: 5200639 (1993-04-01), Ishizuka et al.
patent: 5665630 (1997-09-01), Ishizuka et al.
patent: 6144040 (2000-11-01), Ashton
patent: 6365447 (2002-04-01), Hebert et al.
patent: 6472709 (2002-10-01), Blanchard
patent: 6798037 (2004-09-01), Leonardi
patent: 2002/0125527 (2002-09-01), Blanchard
patent: 2002/0142507 (2002-10-01), Egashira
patent: 2003/0042574 (2003-03-01), Schwartzmann

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