Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1995-06-07
1998-02-10
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 82, 117 83, 117954, 117955, C30B 2700
Patent
active
057164495
ABSTRACT:
An optical dome or window formed of a composition which is transmissive to infrared frequencies in the range of from about 1 micron to about 14 microns and which is relatively opaque to substantially all frequencies above about 14 microns consisting essentially of a compound taken from the class consisting of group III-V compounds doped with an element taken from the class consisting of shallow donors and having less than about 1.times.10.sup.7 atoms/cc impurities and having less than about 1.times.10.sup.15 parts carbon. The shallow donors are Se, Te and S, preferably Se, with the Se concentration from 5.times.10.sup.15 atoms/cc to 2.times.10.sup.16 atoms/cc. The group III-V compound is preferably GaAs or GaP. The group III-V compound is fabricated by providing a graphite vessel containing a graphite cloth with the molten group III element thereover, a shallow donor and water containing boron oxide thereover, loading the group V element into the vessel in essentially stoichiometric amounts to provide the molten compound of the group III and group V elements and cooling the molten compound progressively in a vertical direction from bottom to top to form a crystal by causing growth of the crystal from the bottom up in a vertical direction. The crystal with B.sub.2 O.sub.3 thereon is then placed in a vacuum to reboil the B.sub.2 O.sub.3 and cause it to foam. The B.sub.2 O.sub.3 is then easily removed from the crystal.
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Donaldson Richard L.
Grossman Rene E.
Kunemund Robert
Texas Instruments Incorporated
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