Method of forming a compound semiconductor film

Details Method of forming a compound semiconductor film Method of forming a compound semiconductor film

1997-05-30

1999-12-14

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, 117102, 117103, 4272557, C30B 2502

Patent

active

060011734

ABSTRACT:
A method of forming a smooth, continuous compound semiconductor film, e.g., a GaN film, is provided. When a GaN film is formed in accordance with this method, Ga is caused to arrive at a sapphire substrate in accordance with a first arrival rate profile over a growth period during which the film is formed, and nitrogen is caused to arrive at the substrate in accordance with a second arrival rate profile over the growth period. The first and second arrival rate profiles are such that the Ga and N are caused to arrive simultaneoulsly at the substrate over the growth period and so that (i) during an initial part of the growth period, growth of the film takes place under a stoichiometric exccess of Ga and (ii) during a subsequent part of the growth period, growth of the film takes place under a stoichiometric excess of N.

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