Method of forming a circuit membrane with a polysilicon film

Details Method of forming a circuit membrane with a polysilicon film Method of forming a circuit membrane with a polysilicon film

1995-06-07

1997-05-27

Dang, Trung

Chemistry: molecular biology and microbiology

Enzyme , proenzyme; compositions thereof; process for...

Hydrolase

437228ES, 437974, 148DIG135, 216 79, 216 99, H01L 21465

Patent

active

056332092

ABSTRACT:
General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.

REFERENCES:
patent: 3938175 (1976-02-01), Jaffe et al.
patent: 4070230 (1978-01-01), Stein
patent: 4131985 (1979-01-01), Greenwood et al.
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 4702936 (1987-10-01), Maeda et a.l
patent: 4721938 (1988-01-01), Stevenson
patent: 4784721 (1988-11-01), Holmen et al.
patent: 5006202 (1991-04-01), Hawkins et al.
patent: 5071510 (1991-12-01), Findler et al.
patent: 5095349 (1992-03-01), Fujii et al.
patent: 5110373 (1992-05-01), Mauger

Affiliated with

Also associated with

Rating

Method of forming a circuit membrane with a polysilicon film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a circuit membrane with a polysilicon film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a circuit membrane with a polysilicon film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2328894