Method of forming a chlorinated silicon nitride barrier layer

Details Method of forming a chlorinated silicon nitride barrier layer Method of forming a chlorinated silicon nitride barrier layer

1992-05-04

1995-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 63, 437 69, 437 70, H01L 2102

Patent

active

054439981

ABSTRACT:
A method of forming a chlorinated silicon nitride barrier layer is disclosed. The method of the present invention includes depositing a silicon nitride layer over a semiconductor substrate. The silicon nitride layer is exposed to an ambient including chlorine at an elevated temperature for a predetermined time to form the chlorinated silicon nitride barrier layer that is resistant to attack by at least one reactive compound.

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Ghandi; VLSI Fabrication Principals; pp. 385-391 (1983).
Sze; VLSI Technology; pp. 156-157 (1983).
Kahng; Silicon Integrated Circuits; pp. 79-81 (1981).

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