Method of forming a charge-storage electrode of semiconductor de

Details Method of forming a charge-storage electrode of semiconductor de Method of forming a charge-storage electrode of semiconductor de

1996-04-04

1997-06-10

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438653, H01L 218242

Patent

active

056375271

ABSTRACT:
This invention discloses a method of forming a charge-storage electrode of a semiconductor device by forming a platinum film at a side wall and top area of a polysilicon charge-storage electrode, in which the platinum film restrains a leakage current through a high dielectric film at the same time the capacitance can be increased.

REFERENCES:
patent: 5137842 (1992-08-01), Chan et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5382817 (1995-01-01), Kashihara et al.
patent: 5504041 (1996-04-01), Summerfelt
patent: 5573979 (1996-11-01), Tsu et al.

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