Method of forming a cathode and integral spacer

Details Method of forming a cathode and integral spacer Method of forming a cathode and integral spacer

1980-04-14

1982-02-23

McQuade, John

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

29 2516, H01J 904

Patent

active

043163130

ABSTRACT:
Critical spacings between the cathode and grid of an electron gun structure are enabled by a cathode structure including a removable spacer, such structure produced by first forming a layer of potentially electron emissive material on the cathode, then forming a solvent drop on the layer, and contacting the drop with a spacer to adhere the spacer to the layer.

REFERENCES:
patent: 2415412 (1947-02-01), Buchwald et al.
patent: 4176432 (1979-12-01), McCandless

Affiliated with

Also associated with

Rating

Method of forming a cathode and integral spacer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a cathode and integral spacer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a cathode and integral spacer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1770085