Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2007-09-18
2007-09-18
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S398000, C438S665000
Reexamination Certificate
active
11105148
ABSTRACT:
The invention includes methods of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. In one implementation, a substrate is provided which has a first substrate surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms. The first substrate surface has a first degree of roughness. Within a chamber, the first substrate surface is exposed to a PF3comprising atmosphere under conditions effective to form a second substrate surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms which has a second degree of roughness which is greater than the first degree of roughness. The substrate having the second substrate surface with the second degree of roughness is ultimately removed from the chamber.
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Trinh Michael
Wells St. John P.S.
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