Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-07-26
2011-07-26
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S141000, C438S379000, C257S473000, C257S476000, C257S480000, C257S485000, C257S486000, C257SE21351, C257SE21364
Reexamination Certificate
active
07985615
ABSTRACT:
The present invention relates to embodiments of TPV cell structures based on carbon nanotube and nanowire materials. One embodiment according to the present invention is a p-n junction carbon nanotube
anowire TPV cell, which is formed by p-n junction wires. A second embodiment according to the present invention is a carbon nanotube
anowire used as a p-type (or n-type), and using bulk material as the other complementary type to a form p-n junction TPV cell. A third embodiment according to the present invention uses a controllable Schottky barrier height between a one-dimensional nanowire and a metal contact to form the built-in potential of the TPV cells.
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Liu Fei
Siguang Ma
Wang Kang L.
Ballard Spahr LLP
Pham Thanh V
The Regents of the University of California
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