Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2009-07-21
2011-10-25
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S026000, C257S164000, C257SE29030
Reexamination Certificate
active
08044388
ABSTRACT:
Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.
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Meinhold Mitchell
Schlatka Benjamin
Segal Brent M.
Smith Robert F.
Ward Jonathan W.
Louie Wai-Sing
Nantero Inc.
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