Method of forming a capacitor or an inductor on a substrate

Details Method of forming a capacitor or an inductor on a substrate Method of forming a capacitor or an inductor on a substrate

1997-12-15

1999-08-24

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

438393, 29 2542, 361322, H01G 400, H01F 4100

Patent

active

059435801

ABSTRACT:
High dielectric constant capacitors and/or inductors are formed on a substrate by depositing an amorphous layer (10) of a metal oxide on the substrate (12). A pattern is formed in the metal oxide by wet or dry etching to remove portions (17) of the amorphous material so that only portions (18) of the substrate remain covered. This pattern subsequently becomes the dielectric portion of the capacitor or the inductor. The patterned amorphous layer of metal oxide is then heated under conditions sufficient to convert it from amorphous to crystalline (16), thus increasing the dielectric constant.

REFERENCES:
patent: 4026811 (1977-05-01), Readey et al.
patent: 4471405 (1984-09-01), Howard et al.
patent: 5083236 (1992-01-01), Chason et al.
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5587870 (1996-12-01), Anderson et al.

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