Method of forming a capacitor having contact hole treated with h

Electrical connectors – Preformed panel circuit arrangement – e.g. – pcb – icm – dip,... – With mating connector which receives panel circuit edge

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437919, H01L 2170, H01L 2700

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active

055277306

ABSTRACT:
An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

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patent: 5108941 (1992-04-01), Patterson et al.
patent: 5154949 (1992-10-01), Shindo et al.
patent: 5179042 (1993-01-01), Mikoshiba et al.
patent: 5196372 (1993-03-01), Mikoshiba et al.
patent: 5200639 (1993-04-01), Sohizuka et al.
patent: 5233224 (1993-08-01), Ikeda et al.
patent: 5302855 (1994-04-01), Matsumoto et al.
patent: 5328873 (1994-07-01), Mikoshiba et al.
patent: 5364664 (1994-11-01), Tsubouchi et al.
The following US application
U.S. pat. 5,476,815, Dec. 1995, filed on Jul. 19, 1994.
US 5,492,734, Feb. 20, 1996, filed on Jun. 17, 1995.
U.S. pat. 5,438,218 Aug. 1995 filed on Apr. 30, 1993.

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