Method of forming a capacitor for DRAM

Details Method of forming a capacitor for DRAM Method of forming a capacitor for DRAM

1998-11-06

1999-10-19

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438254, 438397, H01L 2120

Patent

active

059703598

ABSTRACT:
A method of forming a capacitor for DRAM according to the invention is disclosed. The method includes the follow steps: a dielectric layer, an etching stop layer, a first insulating layer, a first conductive layer and a second insulating layer are formed in order on a substrate. A contact hole is formed in the second insulating layer. the first conductive layer, the first insulating layer, the etching stop layer and the dielectric layer. Then, a second conductive layer is formed over the substrate and completely fills the contact hole. The second conductive layer is patterned. Next, a silicon nitride layer is formed adjacently to the patterned second conductive layer. Parts of the second insulating layer and the first conductive layer are removed by using the silicon nitride layer as a mask, thereby exposing parts of the first insulating layer. Afterwards, a third conductive layer is formed over the substrate. Parts of the third conductive layer on the silicon nitride layer and parts of the first insulating layer are removed. Thereafter, the silicon nitride layer, the remaining second insulating layer, the first insulating layer are removed to expose a part of a lower electrode consisting of the remaining first, second and third conductive layers.

REFERENCES:
patent: 5432116 (1995-07-01), Keum et al.
patent: 5536673 (1996-07-01), Hong et al.
patent: 5543356 (1996-08-01), Keum et al.
patent: 5909620 (1999-06-01), Wu
patent: 7521168 (1998-02-01), Wu

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