Method of forming a capacitor for a semiconductor device

Details Method of forming a capacitor for a semiconductor device Method of forming a capacitor for a semiconductor device

1996-10-10

1999-09-14

Brown, Peter Toby

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, H01L 218242

Patent

active

059536187

ABSTRACT:
A method of forming a capacitor for a semiconductor memory device, includes the steps of forming first and second insulating layers to form a first contact hole on a substrate, forming a first conductive layer and a third insulating layer within the first contact hole so as to define a second contact hole, forming a second conductive layer within the second contact hole, removing the second and third insulating layers to form a storage electrode, and forming a dielectric layer and a third conductive layer on the storage electrode to form a capacitor.

REFERENCES:
patent: 4970564 (1990-11-01), Kimura et al.
patent: 5140389 (1992-08-01), Kimura et al.
patent: 5150276 (1992-09-01), Gonzalez et al.
patent: 5744833 (1998-04-01), Chao
patent: 5780334 (1998-07-01), Lim et al.
patent: 5801079 (1998-09-01), Takaishi
patent: 5821139 (1998-10-01), Tseng
patent: 5849617 (1998-12-01), Wu

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