Method of forming a capacitor

Details Method of forming a capacitor Method of forming a capacitor

1994-11-02

1995-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 49, 437919, 437 52, 148DIG14, H01L 218242

Patent

active

054440130

ABSTRACT:
A method of forming a capacitor includes, a) providing a substrate; b) etching into the substrate to provide a depression in the substrate, the depression having a sidewall which is angled from vertical; c) providing a conformal layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression; and d) ion implanting the hemispherical grain polysilicon layer with a conductivity enhancing impurity. Preferred methods of providing the depression where the substrate comprises SiO.sub.2 include a dry, plasma enhanced, anisotropic spacer etch utilizing reactant gases of CF.sub.4 and CHF.sub.3 provided to the substrate at a volumetric ratio of 1:1, and facet sputter etching.

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Hirohito Watanabe, et al., "Device Application and Structure Observation for Hemispherical-Grained Silicon", Apr. 1, 1992, J. Appl. Phys. vol. 71 (7), pp. 3538-3543.
Hirohito Watanabe, et al., "Hemispherical Grain Silicon for High Density DRAMs", Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, Tsukuba, 1992, pp. 422-424, 5 total pages.
H. Watanabe, et al., "Hemispherical Graines Silicon (HSG-Si) Formation on In-Situ Phopsphorous Doped Amorphous-Si Using The Seeding Method", Undated, pp. PD3-PD3-3.

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