Method of forming a capacitor

Details Method of forming a capacitor Method of forming a capacitor

1997-04-18

1998-05-19

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438389, 438398, 438246, H01L 2120

Patent

active

057535582

ABSTRACT:
A method of forming a capacitor includes, a) providing a substrate; b) etching into the substrate to provide a depression in the substrate, the depression having a sidewall which is angled from vertical; c) providing a conformal layer of hemispherical grain polysilicon within the depression and over the angled sidewall, the layer of hemispherical grain polysilicon less than completely filling the depression; and d) ion implanting the hemispherical grain polysilicon layer with a conductivity enhancing impurity. Preferred methods of providing the depression where the substrate comprises SiO.sub.2 include a dry, plasma enhanced, anisotropic spacer etch utilizing reactant gases of CF.sub.4 and CHF.sub.3 provided to the substrate at a volumetric ratio of 1:1, and facet sputter etching.

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