Method of forming a capacitance type gaseous sensing device and

Details Method of forming a capacitance type gaseous sensing device and Method of forming a capacitance type gaseous sensing device and

1994-10-25

1999-01-12

Picard, Leo P.

Metal working

Electric condenser making

Solid dielectric type

361280, H01G 700

Patent

active

058572503

ABSTRACT:
The capacitance type gaseous sensing device (10) includes a first electrode layer (12) formed on a semiconductor substrate layer (14). A seed layer (16) is formed on the first electrode layer (12). A reorganized layer (18) is formed on the first electrode layer (12) through interaction with the seed layer (16) to form a porous sensing layer. A second electrode layer (20) is formed on the reorganized layer (18). The reorganized layer (18) absorbs gaseous elements that change the dielectric constant of the capacitance type sensor device (10). A change in the dielectric constant causes a change in the capacitance of the reorganized layer (18) as measured across the first electrode layer (12) and the second electrode layer (20).

REFERENCES:
patent: 4860584 (1989-08-01), Mercer et al.
patent: 5124021 (1992-06-01), Kaneyasu et al.
patent: 5143696 (1992-09-01), Haas et al.
patent: 5372785 (1994-12-01), Johnson et al.
patent: 5386798 (1995-02-01), Lowndes et al.

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