Method of forming a cadmium telluride/silicon structure

Details Method of forming a cadmium telluride/silicon structure Method of forming a cadmium telluride/silicon structure

1997-09-17

1999-11-23

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 87, 438 95, 438102, H01L 2100, H01L 2106

Patent

active

059899336

ABSTRACT:
In one embodiment, a semiconductor structure is disclosed. The structure includes both a silicon and a cadmium telluride layer. Each may have a (100) lattice orientation. A plurality of buffer layers are disposed between the silicon layer and the cadmium telluride layer. Each of these buffer layers has a lattice constant which is greater than the lattice constant of the layer below it and less than the lattice constant of the layer above it. As examples, these buffer layers may comprise zinc sulfide, zinc selenide, zinc telluride or zinc tellurium selenide.

REFERENCES:
patent: 5198690 (1993-03-01), Kitagawa et al.
patent: 5449927 (1995-09-01), Hamilton, Jr. et al.
patent: 5581117 (1996-12-01), Kawano
patent: 5661074 (1997-08-01), Tischler

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