Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1996-09-19
1998-11-17
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257190, H01L 3100, H01L 310328, H01L 310336, H01L 31072
Patent
active
058380531
ABSTRACT:
In one embodiment, a semiconductor structure is disclosed. The structure includes both a silicon and a cadmium telluride layer. Each may have a (100) lattice orientation. A plurality of buffer layers are disposed between the silicon layer and the cadmium telluride layer. Each of these buffer layers has a lattice constant which is greater than the lattice constant of the layer below it and less than the lattice constant of the layer above it. As examples, these buffer layers may comprise zinc sulfide, zinc selenide, zinc telluride or zinc tellurium selenide.
REFERENCES:
patent: 4686373 (1987-08-01), Tew et al.
patent: 4910154 (1990-03-01), Zanio et al.
patent: 4914053 (1990-04-01), Matyi et al.
patent: 4994867 (1991-02-01), Biegelsen
patent: 5300777 (1994-04-01), Goodwin
patent: 5374841 (1994-12-01), Goodwin
patent: 5449927 (1995-09-01), Hamilton, Jr. et al.
patent: 5581117 (1996-12-01), Kawano
de Lyon et al., "Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates", Applied Physics Lett., vol. 63, No. 6, Aug. 9, 1993, pp. 818-820.
Sporken et al., "Molecular beam epitaxial growth of CdTe and HgCdTe on Si(100)", Applied Physics Lett., vol. 55 (18), Oct. 30, 1989, pp. 1879-1881.
Bevan Malcolm J.
Shih Hung-Dah
Meier Stephen
Raytheon TI Systems Inc.
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