Method of forming a bond pad

Details Method of forming a bond pad Method of forming a bond pad

2005-08-02

2005-08-02

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S127000, C438S612000, C438S688000

Reexamination Certificate

active

06924172

ABSTRACT:
A top-most layer (64) is formed over a bond pad layer (62) and under a passivation layer (68) and a polyimide layer (72). Openings (70and74) are formed within the passivation layer (68) and the polyimide layer (72) to expose the top-most layer (64), which protects the bond pad layer (62) during the formation of the openings (70and74). In one embodiment, the exposed top-most layer (64) is selectively etched using hydrogen peroxide and an amine, such as ammonium hydroxide. Because the chemistry does not attack the bond pad layer (62), the bond pad layer's thickness is not decreased and thus, reliability of the bond pad is maintained.

REFERENCES:
patent: 6200910 (2001-03-01), O'Brien
patent: 6538323 (2003-03-01), Sakata et al.
Danzl, Ralph B. et al.; “The Use of Concentrated Hydrogen Peroxide for the Removal of a TiW ARC from Aluminum Bond Pads”; Electronics Manufacturing Technology Symposium, 1997, Twenty-First IEEE/CPMT International, Oct. 13-15, 1997; pp 99-109 + cover sheet; IEEE, USA.

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