Method of forming a BJT with ESD self protection

Details Method of forming a BJT with ESD self protection Method of forming a BJT with ESD self protection

2007-05-03

2008-09-09

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S508000, C438S335000, C438S327000, C438S370000, C438S372000, C257S565000, C257S557000, C257S558000, C257S273000

Reexamination Certificate

active

07422952

ABSTRACT:
A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating the hot spot away from the collector contact prevents the collector contact from melting during an electrostatic discharge (ESD) pulse.

REFERENCES:
patent: 4622738 (1986-11-01), Gwozdz et al.
patent: 5541433 (1996-07-01), Lien
patent: 5565701 (1996-10-01), Zambrano
patent: 5874767 (1999-02-01), Terashima et al.
patent: 6737722 (2004-05-01), Yamamoto et al.
patent: 6770952 (2004-08-01), Babcock et al.
patent: 6815732 (2004-11-01), Vashchenko et al.
patent: 6815800 (2004-11-01), Mallikarjunaswamy
patent: 6919588 (2005-07-01), Vashchenko et al.
patent: 7064397 (2006-06-01), Vashchenko et al.
patent: 7126168 (2006-10-01), Vashchenko et al.
patent: 7145206 (2006-12-01), Mallikarjunaswamy
patent: 7217966 (2007-05-01), Vashchenko et al.
patent: 2002/0003285 (2002-01-01), Sasaki

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