Fishing – trapping – and vermin destroying
Patent
1988-12-27
1990-06-12
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 31, 437 41, 437 59, 437200, 437193, 437178, 148DIG10, 148DIG11, 357 34, 357 59, H01L 21265
Patent
active
049332953
ABSTRACT:
A method of forming a bipolar transistor comprising the steps of forming a base region in a semiconductor structure and disposing an emitter region on a surface of a first portion of the base region, the emitter region having upper and side surfaces. An active base region is formed in the first portion of the base region and an inactive base region is formed in a second portion of the base region adjacent to the first portion and the side surface of the emitter region. A layer of insulating material is formed over a surface of the inactive base region and over the upper and side surfaces of the emitter region. Portions of such layer are selectively removed to expose the upper surface of the emitter region and a portion of the surface of the inactive base region, and to maintain a region of insulating material between the exposed surface portion of the inactive base region and the side surface of the emitter region. Silicide contacts are formed on the exposed surface portion of the inactive base region and the exposed upper surface of the emitter region, with the insulating material region insulating such contacts from each other. With such arrangement, the spacing between the base and emitter contacts may be substantially reduced, such as to the width of the insulating material region, thereby reducing the size (i.e. width), base-to-emitter resistance, base contact resistance and base-to-emitter and base-to-collector capacitance of the bipolar transistor.
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Hearn Brian E.
McAndrews Kevin
Raytheon Company
Sharkansky Richard M.
Walsh Edmund J.
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