Method of forming a bi-directional diode and structure therefor

Details Method of forming a bi-directional diode and structure therefor Method of forming a bi-directional diode and structure therefor

2011-08-23

2011-08-23

Roman, Angel (Department: 2812)

Semiconductor device manufacturing: process

Avalanche diode manufacture

C438S091000, C438S237000, C438S328000, C438S983000, C257SE21356, C257SE29335

Reexamination Certificate

active

08003478

ABSTRACT:
In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

REFERENCES:
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patent: 2004/0183098 (2004-09-01), Khemka et al.
patent: 2006/0014342 (2006-01-01), Khemka et al.
patent: 2006/0211179 (2006-09-01), Siemieniec et al.
M.Schitt et al., A Comparison of Electron, Proton and Helium Ion Irradiation for the Optimization of the CoolMOS Body Diode, 2002, Infineon Technologies, pp. 229-232.
B. Jayant Baliga and Edmund Sun, “Comparison of Gold, Platinum, and Electron Irradiation for Controlling Lifetime in Power Rectifiers”, IEEE Transations on Electron Devices, vol. ED-24, No. 6, Jun. 1977, pp. 685-688.
B. J. Baliga and A. O. Evwaraye, “Correlation of Lifetime with Recombination Centers in Electron-Irradiated P-Type Silicon”, J. Electrochem. Soc.: Solid-State Science and Technology, Sep. 1983, pp. 1916-1918.

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