Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-01-11
2005-01-11
Lebentritt, Micheal (Department: 2824)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S012000, C438S286000, C438S287000
Reexamination Certificate
active
06841395
ABSTRACT:
A fabrication process for a tunneling magnetoresistance (TMR) sensor is disclosed. In particular, a unique method of forming a barrier layer of the TMR sensor is utilized so that the TMR sensor exhibits good magnetic and TMR properties. In one particular example, the barrier layer is formed by depositing a metallic film in an argon gas in a DC magnetron sputtering module, depositing an oxygen-doped metallic film in mixed xenon and oxygen gases in an ion-beam sputtering module, and oxidizing these films in an oxygen gas in an oxygen treatment module. This three-step barrier layer formation process minimizes oxygen penetration into ferromagnetic (FM) sense and pinned layers of the TMR sensor and optimally controls oxygen doping into the barrier layer. As a result, the FM sense and pinned layers exhibit controlled magnetic properties, the barrier layer provides a low junction resistance-area product, and the TMR sensor exhibits a high TMR coefficient.
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Linn Tsann
Mauri Daniele
Lebentritt Micheal
Oskorep, Esq. John J.
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