Method of forming a barrier layer arrangement for conductive lay

Details Method of forming a barrier layer arrangement for conductive lay Method of forming a barrier layer arrangement for conductive lay

1989-03-21

1991-02-19

Woo, Jay H.

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505826, 505832, 505817, 505818, 505920, 505730, 505739, 365161, 365162, 361397, 174256, 437 75, 437 76, 437 97, 148276, B32B 900

Patent

active

049944347

ABSTRACT:
A process is disclosed of producing on a crystalline silicon substrate a barrier layer triad capable of protecting a rare earth alkaline earth copper oxide conductive coating from direct interaction with the substrate. A silica layer of at least 2000 .ANG. in thickness is deposited on the silicon substrate, and followed by deposition on the silica layer of a Group 4 heavy metal to form a layer having a thickness in the range of from 1500 to 3000 .ANG.. Heating the layers in the absence of a reactive atmosphere to permit oxygen migration from the silica layer forms a barrier layer triad consisting of a silica first triad layer located adjacent the silicon substrate, a heavy Group 4 metal oxide third triad layer remote from the silicon substrate, and a Group 4 heavy metal silicide second triad layer interposed between the first and third triad layers.

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