Method of forming 3-D structures using MOVCD with in-situ photoe

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148DIG6, 148DIG51, 148DIG71, 148DIG94, 148DIG110, 156613, 156649, 427 531, 437173, 437228, 437935, 437936, H01L 2120

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049332996

ABSTRACT:
MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching.
To prevent pattern broadening by diffussion of the active species the substrate is preferably protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied for exposing to substrate to 20.degree./o O.sub.2 +80.degree./oN.sub.2 for about 3 minutes at 450.degree. C.

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patent: 4592306 (1986-06-01), Gallego
patent: 4624736 (1986-11-01), Gee et al.
Eden, "Photochemical Processing of Semiconductors," IEEE Circuits and Devices, Jan. 1986, pp. 18-24.
Uchida et al.,". . . In Situ Dry Etching and Deposition Processing System," IEEE J. Quan. Elect., vol. 24, No. 11, Nov. 1988, pp. 2170-77.
Aoki et al., "Effect of Photochemical Etching . . .", Electron. Lett., 13th Aug. 1987, vol. 23 No. 17, pp. 891-892.

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